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|
5 ″ Monocrystalline Silicon Wafer Specification Sheet
SAS Spec# PV-58 Revision: A
Custorner P/N: Revised Date: 2005/4/28 |
| No.
|
|
Item
|
Specification
|
Unit
|
Remarks
|
| 1 |
|
|
|
|
|
| 1.1 |
|
Crystal Growth Method
|
CZ |
|
|
| 1.2 |
|
Crystal Orientation
|
<100> ± 3 |
degree |
ASTM F26–B7A |
| 1.3 |
|
Conductivity Type
|
P |
|
ASTM F–42–93 |
| 1.4 |
|
Dopant
|
Boron
|
|
|
| 1.5 |
|
Resitivity
|
0.5 – 2 |
o-cm |
ASTM F–81–95 |
| 1.6 |
|
RRV |
N/A |
% |
|
| 1.7 |
|
EPD – max |
2000 |
ea/cm 2 |
ASTM F47–94 |
| 1.8 |
|
Diffusion Length
|
N/A |
μ m |
|
| 1.9 |
|
Lifetime – min
|
10 |
μ s |
|
| 1.10 |
|
Oxygen Concemtration
|
<1.0 x E18 at/cm 3 |
|
ASTM F121–B3 |
| 1.11 |
|
Garbon Concerntration
|
<5.0 x E16 at/cm 3 |
|
ASTM F–123–B1 |
| 2 |
|
|
|
|
|
| 2.1 |
|
Type
|
|
|
|
| 2.2 |
|
Dimension
|
|
|
|
| 2.3 |
|
A |
125 ± 0.5 |
mm |
|
| 2.4 |
|
B |
150 ± 0.5 |
mm |
|
| 2.5 |
|
C |
84 ± 3 |
mm |
|
| 2.6 |
|
D |
– |
mm |
|
| 2.7 |
|
Angle between square sides
|
90 ± 0.3 |
Degree |
|
| 3 |
|
|
|
|
|
| 3.1 |
|
Thickness
|
240 +/– 30 |
μ m |
|
| 3.2 |
|
TTV – max |
30 |
μ m |
|
| 3.3 |
|
Bow – max
|
50 |
μ m |
|
| 3.4 |
|
Warpage – max
|
50 |
μ m |
|
| 3.5 |
|
Taper
|
N/A |
μ m |
|
| 3.6 |
|
Surface Finished
|
As wire–cur
|
%
|
|
| 3.7 |
|
Surface Roughness, Ra / Rmax
|
/ |
μ m |
|
| 3.8 |
|
Saw Mark Depth – max
|
20 |
μ m |
|
| 3.9 |
|
Chip Length – max
|
5 |
mm |
|
| 3.10 |
|
Chip Depth – max
|
0.5 |
mm |
|
| 3.11 |
|
Appearance
|
None of fracture, cracks, foreign materials and stains
|
| 3.12 |
|
Packing
|
Shrink wrap per 100 wafers
|
| note |
|
|
|
|
|
|
|
|
| |
|
|
|
